Search results for "Molecular beam epitaxy"
showing 10 items of 73 documents
High quality epitaxial Mn 2 Au (001) thin films grown by molecular beam epitaxy
2020
The recently discovered phenomenon of Neel spin–orbit torque in antiferromagnetic Mn2Au [Bodnar et al., Nat. Commun. 9, 348 (2018); Meinert et al., Phys. Rev. Appl. 9, 064040 (2018); Bodnar et al., Phys. Rev. B 99, 140409(R) (2019)] has generated huge interest in this material for spintronics applications. In this paper, we report the preparation and characterization of high quality Mn2Au thin films by molecular beam epitaxy and compare them with magnetron sputtered samples. The films were characterized for their structural and morphological properties using reflective high-energy electron diffraction, x-ray diffraction, x-ray reflectometry, atomic force microscopy, and temperature dependen…
Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction
2013
Optical properties of InN nanocolumns: Electron accumulation at InN non‐polar surfaces and dependence on the growth conditions
2009
InN nanocolumns grown by plasma-assisted molecular beam epitaxy have been studied by photoluminescence (PL) and photoluminescence excitation (PLE). The PL peak energy was red-shifted with respect to the PLE onset and both energies were higher than the low temperature band-gap reported for InN. PL and PLE experiments for different excitation and detection energies indicated that the PL peaks were homogeneously broadened. This overall phenomenology has been attributed to the effects of an electron accumulation layer present atthe non-polar surfaces of the InN nanocolumns. Variations in the growth conditions modify the edge of the PLE spectra and the PL peak energies evidencing that the densit…
Polarity conversion of GaN nanowires grown by plasma-assisted molecular beam epitaxy
2019
International audience; It is demonstrated that the N-polarity of GaN nanowires (NWs) spontaneously nucleated on Si (111) by molecular beam epitaxy can be reversed by intercalation of an Al-or Ga-oxynitride thin layer. The polarity change has been assessed by a combination of chemical etching, Kelvin probe force microscopy, cathodo-and photoluminescence spectroscopy and transmission electron microscopy experiments. Cathodoluminescence of the Ga-polar NW section exhibits a higher intensity in the band edge region, consistent with a reduced incorporation of chemical impurities. The polarity reversal method we propose opens the path to the integration of optimized metal-polar NW devices on any…
Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
2011
Abstract The growth of GaN nanowires by means of plasma assisted molecular beam epitaxy directly on Si(1 1 1) has been investigated as a function of temperature. Statistical analysis of scanning electron microscopy pictures taken for different growth temperatures has revealed that density, diameter, length and length dispersion of nanowires were strongly dependent on temperature. Length dispersion, in particular, was found to be significant at high temperature. These features have been assigned to the different duration of the nucleation process with temperature, namely to the dependence with temperature of the time necessary for the size increase of the three-dimensional precursors up to a…
ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
2016
Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…
Direct observation of elemental segregation in InGaN nanowires by X-ray nanoprobe
2011
Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano-X-ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin- gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibi…
MBE growth and properties of low-density InAs/GaAs quantum dot structures.
2011
We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaAs upper confining layers. Owing to these particular design and growth parameters, quantum dot densities are in the order of 4-5x109 cm-2 with emission wavelengths ranging from 1.20 to 1.33 µm at 10 K, features that make these structures interesting for single-photon operation at telecom wavelength. High resolution structural techniques show that In content and composition profiles in the structures depend on …
Clean and ordered surfaces of CeNi 2 Ge 2 layers on W(110)
1997
Investigations of the geometric and electronic properties of ternary Ce-based heavy fermion systems CeT2X2 (T : Ni,Pd,Rh; X : Ge,Si) were carried out by means of electron spectroscopic methods. The main problem for these surface-sensitive techniques is the preparation of well-ordered and atomically clean surfaces. The ternary substance CeNi2Ge2 was grown on a W(110) substrate by MBE with subsequent annealing. A nearly layer-by-layer growth mode was detected using MEED. The annealed layers are ordered, but show small Ni2Ge crystalline islands. The composition was characterised by means of AES in dependence of the substrate as well as the annealing temperature. Electronic properties are inves…
Re-entrance phase formation of CeSb thin films
2001
Abstract We report the epitaxial growth of (1 0 0)- and (1 1 1)-oriented CeSb thin films on Al 2 O 3 (1 1 2 0) and (0 0 0 1) substrates by means of molecular beam epitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular state of Sb x , we observe a re-entrance behavior in the phase formation and orientation of CeSb on Al 2 O 3 (1 1 2 0) . This behavior is shown to exhibit, in some respect, similarities to III–V compound growth, but also more complexities due to the instability of the rare earth component against oxidation. A geometric orientation selection model is suggested which reproduces the observed re-entrance behavior as well as the overall CeSb growth rate.